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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PBSS2515YPN 15 V low VCEsat NPN/PNP transistor Product specification Supersedes data of 2001 Jul 24 2002 May 08 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor FEATURES * Low collector-emitter saturation voltage * High current capability * Replaces two SC-70 packaged low VCEsat transistors on same PCB area * Reduces required PCB area * Reduced pick and place costs. APPLICATION * General purpose switching and muting * Low frequency driver circuits * LCD backlighting * Supply line switching circuits * Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION NPN/PNP low VCEsat transistor pair in a SC-88 plastic package. MARKING TYPE NUMBER PBSS2515YPN MARKING CODE N8t Fig.1 1 Top view 2 3 MAM445 PBSS2515YPN QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 15 1 <500 UNIT V A m 6 handbook, halfpage 5 4 6 5 4 TR2 TR1 1 2 3 Simplified outline SC-88 (SOT363) and symbol. 2002 May 08 2 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS - - - - - - Tamb 25 C - -65 - 65 Tamb 25 C; note 1 - PBSS2515YPN MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 416 UNIT K/W total power dissipation 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector 15 15 6 500 1 100 200 +150 150 +150 V V V mA A mA mW C C C 2002 May 08 3 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - - - 200 150 90 - - - - - - 250 - 100 - PBSS2515YPN TYP. - - - - - - - - - 300 - - 420 4.4 MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO IEBO hFE collector-base cut-off current emitter-base cut-off current DC current gain VCB = 15 V; IE = 0 VCB = 15 V; IE = 0; Tj = 150 C VEB = 5 V; IC = 0 VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 100 mA; note 1 VCE = 2 V; IC = 500 mA; note 1 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 200 mA; IB = 10 mA IC = 500 mA; IB = 50 mA; note 1 RCEsat VBEsat VBEon fT Cc fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage IC = 500 mA; IB = 50 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 VCE = 2 V; IC = 100 mA; note 1 IC = 100 mA; VCE = 5 V; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz IC = -100 mA; VCE = -5 V; f = 100 MHz VCB = -10 V; IE = Ie = 0; f = 1 MHz 100 50 100 - - - 25 150 250 <500 1.1 0.9 - 6 - 10 mV mV mV m V V nA A nA NPN transistor transition frequency collector capacitance MHz pF PNP transistor transition frequency collector capacitance 280 - MHz pF 2002 May 08 4 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515YPN handbook, halfpage (1) 600 MLD687 handbook, halfpage 1200 VBE 1000 MLD689 hFE (mV) 400 (2) (1) 800 (2) 600 200 (3) (3) 400 0 10-1 1 10 102 IC (mA) 103 200 10-1 1 10 102 IC (mA) 103 TR1 (NPN) VCE = 2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR1 (NPN) VCE = 2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 103 handbook, halfpage VCEsat (mV) 102 MLD691 handbook, halfpage 1200 MLD690 VBEsat (mV) 1000 (1) 800 (2) (1) (2) 600 10 (3) (3) 400 1 10-1 1 10 102 IC (mA) 103 200 10-1 1 10 102 IC (mA) 103 TR1 (NPN) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR1 (NPN) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2002 May 08 5 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515YPN 102 handbook, halfpage RCEsat () 10 (1) (2) MLD692 handbook, halfpage 1200 MLD688 IC (mA) 800 (4) (3) (2) (1) (5) (6) (7) (8) (3) 1 400 (9) (10) 10-1 10-1 1 10 102 IC (mA) 103 0 0 2 4 6 8 10 VCE (V) TR1 (NPN) Tamb = 25 C. (1) (2) (3) (4) (5) IB = 4.6 mA. IB = 4.14 mA. IB = 3.68 mA. IB = 3.22 mA. IB = 2.76 mA. (6) IB = 2.3 mA. (7) IB = 1.84 mA. (8) IB = 1.38 mA. (9) IB = 0.92 mA. (10) IB = 0.46 mA. TR1 (NPN) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.6 Equivalent on-resistance as a function of collector current; typical values. Fig.7 Collector current as a function of collector-emitter voltage; typical values. 2002 May 08 6 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515YPN handbook, halfpage 600 MLD693 handbook, halfpage -1200 VBE (mV) -1000 MLD695 hFE (1) 400 -800 (1) (2) (2) -600 200 (3) (3) -400 0 -10-1 -1 -10 -102 -103 IC (mA) -200 -10-1 -1 -10 -102 -103 IC (mA) TR2 (PNP) VCE = -2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR2 (PNP) VCE = -2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.8 DC current gain as a function of collector current; typical values. Fig.9 Base-emitter voltage as a function of collector current; typical values. -103 handbook, halfpage VCEsat (mV) -102 MLD697 handbook, halfpage -1200 MLD696 VBEsat (mV) -1000 (1) -800 (2) (1) (2) -10 (3) -600 (3) -400 -1 -10-1 -1 -10 -102 IC (mA) -103 -200 -10-1 -1 -10 -102 -103 IC (mA) TR2 (PNP) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR2 (PNP) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. 2002 May 08 7 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515YPN 103 handbook, halfpage RCEsat () 102 MLD698 handbook, halfpage -1200 IC (mA) -800 MLD694 (4) (3) (2) (1) (5) (6) (7) 10 (8) -400 1 (2) (1) (3) (9) (10) 10-1 -10-1 -1 -10 -102 -103 IC (mA) 0 0 -2 -4 -6 -8 -10 VCE (V) TR2 (PNP) Tamb = 25 C. (1) (2) (3) (4) (5) IB = -7 mA. IB = -6.3 mA. IB = -5.6 mA. IB = -4.9 mA. IB = -4.2 mA. (6) IB = -3.5 mA. (7) IB = -2.8 mA. (8) IB = -2.1 mA. (9) IB = -1.4 mA. (10) IB = -0.7 mA. TR2 (PNP) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.12 Equivalent on-resistance as a function of collector current; typical values. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 2002 May 08 8 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads PBSS2515YPN SOT363 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC EIAJ SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2002 May 08 9 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS PBSS2515YPN This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2002 May 08 10 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor NOTES PBSS2515YPN 2002 May 08 11 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp12 Date of release: 2002 May 08 Document order number: 9397 750 09643 |
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